2SD803 Hoja de datos - Inchange Semiconductor
Fabricante
Inchange Semiconductor
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gainhFE = 2000 (Min) @ IC =1 Adc
• Collector-Emitter Breakdown VoltageV(BR)CEO= 100V(Min)
• Wide Area of Safe Operation
APPLICATIONS
• Designed for high power amplifier applications.
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
New Jersey Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
