2SD288 Hoja de datos - Kwang Myoung I.S. CO.,LTD
Fabricante

Kwang Myoung I.S. CO.,LTD
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 55V (MIN)
• Collector Power Dissipation-
: Pc = 25W(Max)@ Tc =25°C
APPLICATIONS
• Designed for power regulator, low frequency high power amplifier applications.
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor