2SD2385 Hoja de datos - Toshiba
Fabricante

Toshiba
Power Amplifier Applications
High breakdown voltage: VCEO= 140 V (min)
Complementary to 2SB1556
Número de pieza
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Fabricante
Silicon NPN Triple Diffused Type (Darlington power transistor)Transistor
Toshiba
Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
Silicon NPN Triple Diffused Type (Darlington) Transistor
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba