2SD2276Q Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V(Min)
·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 7A, VCE= 5V)
·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B
·Complement to Type 2SB1503
APPLICATIONS
·Designed for power amplification.
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.