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2SD2276Q Hoja de datos - Inchange Semiconductor

2SD2276 image

Número de pieza
2SD2276Q

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Inchange Semiconductor 

DESCRIPTION
·Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 140V(Min)
·High DC Current Gain-
   : hFE= 5000( Min.) @(IC= 7A, VCE= 5V)
·Low Collector Saturation Voltage-
   : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B
·Complement to Type 2SB1503


APPLICATIONS
·Designed for power amplification.

 

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Unspecified
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Shenzhen SPTECH Microelectronics Co., Ltd.

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