2SD2206(1997) Hoja de datos - Toshiba
Fabricante

Toshiba
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
• High DC Current Gain: hFE = 2000 (Min.) (VCE = 2 V, IC = 1 A)
• Low Saturation Voltage: VCE (sat) = 1.5 V (Max.) (IC = 1 A, IB = 1 mA)
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor) ( Rev : 2004 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Unspecified
TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
Toshiba