2SD1664(1996) Hoja de datos - ROHM Semiconductor
Fabricante

ROHM Semiconductor
Features
1) Low VCE(sat), VCE(sat) = 0.15V (typical).
(IC/IB = 500mA/50mA)
2) Complements the
2SB1132 / 2SB1237.
Structure
Epitaxial planar type
NPN silicon transistor
Número de pieza
componentes Descripción
Ver
Fabricante
Medium Power Transistor (−32V, −1A)
ROHM Semiconductor
Medium Power Transistor (-32V, -1A)
ROHM Semiconductor
Medium Power Transistor(32V,1A)
Galaxy Semi-Conductor
Medium Power Transistor (−32V,−1A) ( Rev : RevB )
ROHM Semiconductor
Medium Power Transistor (-32V, -1A) ( Rev : 1996 )
ROHM Semiconductor
Medium Power Transistor (-32V, -1A) ( Rev : 2010 )
ROHM Semiconductor
Medium Power Transistor (32V, 1A)
ROHM Semiconductor
Medium Power Transistor (-32V, -1A)
ROHM Semiconductor
Medium Power Transistor (32V, 800mA) ( Rev : 2015 )
ROHM Semiconductor
Medium Power Transistor (32V, 0.8A)
First Silicon Co., Ltd