2SD1525 Hoja de datos - Toshiba
Fabricante

Toshiba
High Current Switching Applications
• High collector current: IC= 30 A
• High DC current gain: hFE= 1000 (min) (VCE= 5 V, IC= 20 A)
• Monolithic construction with built-in base-emitter shunt resistor.
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Fabricante
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba