2SD1416 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A
• High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V
• Complement to Type 2SB1021
APPLICATIONS
• Hammer driver,pulse motor drive applications.
• High power switching applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.