2SD1412 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC= 4A
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V (Min)
• Complement to Type 2SB1019
APPLICATIONS
• High current switching applications.
• Power amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor