2SD1221(1999) Hoja de datos - Toshiba
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Toshiba
AUDIO FREQUENCY POWER AMPLIFIER APPLICATION
• Low Collector Saturation Voltage : VCE (sat) = 0.4 V (Typ.) (IC = 3 A, IB = 0.3 A)
• High Power Dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SB906
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba