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2SD1221
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2SD1221 Hoja de datos - Toshiba
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Audio Frequency Power Amplifier Application
• Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A)
• High power dissipation: PC = 20 W (Tc = 25°C)
• Complementary to 2SB906
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
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TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
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