2SC6087 Hoja de datos - Toshiba
Fabricante
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Power Amplifier Applications
Power Switching Applications
Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max)（ IC = 1A）
High-speed switching: tstg = 0.4 μs (typ)
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Fabricante
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
