2SC5886(2002) Hoja de datos - Toshiba
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Toshiba
High-Speed Swtching Applications
DC-DC Converter Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
• Low collector-emitter saturation: VCE (sat) = 0.22 V (max)
• High-speed switching: tf = 55 ns (typ.)
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TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2013 )
Toshiba
