2SC5713(2013) Hoja de datos - Toshiba
Fabricante

Toshiba
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 400 to 1000 (IC = 0.5 A)
• Low collector-emitter saturation voltage: VCE (sat) = 0.15 V (max)
• High-speed switching: tf = 50 ns (typ.)
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba