2SC5289 Hoja de datos - NEC => Renesas Technology
Fabricante

NEC => Renesas Technology
The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital cordless phones (DECT, PHS, etc.).
FEATURES
• P–1 = 27 dBm TYP.
@f = 1.9 GHz, VCC = 3.6 V, ICq = 1 mA (Class AB), Duty = 1/8
• 4-Pin Mini Mold Package
EIAJ: SC-61
Número de pieza
componentes Descripción
Ver
Fabricante
NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR L BAND POWER AMPLIFIER
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
NEC => Renesas Technology
L-BAND PA DRIVER AMPLIFIER ( Rev : 2002 )
NEC => Renesas Technology
L-BAND PA DRIVER AMPLIFIER
California Eastern Laboratories.
L-BAND PA DRIVER AMPLIFIER
NEC => Renesas Technology
L-BAND PA DRIVER AMPLIFIER
California Eastern Laboratories.
L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
NEC => Renesas Technology