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2SC5219 PDF
2SC5219 Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Features
• High breakdown voltage VCES = 1700 V
• High speed switching tf = 0.15 µsec (typ)
• Built-in damper diode type
• Isolated package TO-3P•FM
APPLICATION
Character display horizontal deflection output
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Triple Diffused Planar
Hitachi -> Renesas Electronics
Silicon NPN Triple Diffused Planar
Hitachi -> Renesas Electronics
Silicon NPN Triple Diffused Planar
Unspecified
Silicon NPN Triple Diffused Planar
Hitachi -> Renesas Electronics
Silicon NPN Triple Diffused Planar
Sanken Electric co.,ltd.
Silicon NPN Triple-Diffused Planar Type
Panasonic Corporation
Silicon NPN Triple-Diffused Planar Type
Panasonic Corporation
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
