2SC5201(2009) Hoja de datos - Toshiba
Fabricante
Toshiba
High-Voltage Switching Applications
• High breakdown voltage: VCEO = 600 V
• Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 20 mA, IB = 0.5 mA)
Número de pieza
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Fabricante
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Unspecified
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE
Toshiba
TOSHIBA Transistor Silicon NPN Triple-Diffused Mesa Type
Toshiba
