2SC4881 Hoja de datos - Toshiba
Fabricante
Toshiba
High-Current Switching Applications
• Low saturation voltage: VCE (sat)= 0.4 V (max)
• High-speed switching: tstg= 0.8 µs (typ.)
Número de pieza
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Fabricante
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
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TOSHIBA Transistor Silicon NPN Epitaxial Type
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TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2013 )
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