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2SC3356-T1B Hoja de datos - NEC => Renesas Technology

2SC3356 image

Número de pieza
2SC3356-T1B

Other PDF
  no available.

PDF
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page
9 Pages

File Size
83.9 kB

Fabricante
NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
   NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
   MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz


Número de pieza
componentes Descripción
Ver
Fabricante
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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Renesas Electronics
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
PDF
NEC => Renesas Technology
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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California Eastern Laboratories.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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NEC => Renesas Technology
Microwave Low Noise Amplifier NPN Silicon Epitaxial Planar Transistor
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