2SC3351-T2B Hoja de datos - NEC => Renesas Technology
Número de pieza
2SC3351-T2B
Fabricante

NEC => Renesas Technology
FEATURES
• NF 1.5 dB TYP. @ f = 1.0 GHz
• MAG 14 dB TYP. @ f = 1.0 GHz
Número de pieza
componentes Descripción
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Fabricante
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
HIGH FREQUENCY AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
Renesas Electronics