2SC3102 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
2SC3102 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers applications in UHF band.
APPLICATIONS
For output stage of 50W power amplifiers in UHF band.
Número de pieza
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Fabricante
RF POWER TRANSISTOR NPN EPITAXIAL PLANAR TYPE
Mitsumi
NPN EPITAXIAL PLANAR TYPE(RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
Mitsumi
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC
NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
MITSUBISHI ELECTRIC