Número de pieza
2SB982
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New Jersey Semiconductor
2SB982 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)CEO=-150V(Min)
• Good Linearity of hFE
• WideArea of Safe Operation
APPLICATIONS
• Designed for high power amplifications.
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