2SB982 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
APPLICATIONS
• Designed for high power amplifications.
Número de pieza
componentes Descripción
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