2SB899 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -50V(Min.)
• Low Collector Saturation Voltage-
: VCE(sat)= -1.2(Max.) @IC= -3A
• 100% avalanche tested
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for use in general purpose amplifier and switching
applications.
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