2SB776 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min)
• Good Linearity of hFE
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD896
APPLICATIONS
• Designed for 40W audio frequency output applications.
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componentes Descripción
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Fabricante
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Shenzhen SPTECH Microelectronics Co., Ltd.
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