2SB656 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·High Power Dissipation-
: PC= 125W(Max)@TC=25℃
·Complement to Type 2SD676
APPLICATIONS
·Designed for low frequency power amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
HIGH POWER AMPLIFIER APPLICATION
Quanzhou Jinmei Electronic
POWER AMPLIFIER APPLICATION
New Jersey Semiconductor
LOW FREQUENCY POWER AMPLIFIER APPLICATION
SHIKE Electronics
Differential Amplifier Application
Tiger Electronic
Differential Amplifier Application
Tiger Electronic
SWITCHING AND AMPLIFIER APPLICATION ( Rev : 2005 )
Unisonic Technologies
SWITCHING AND AMPLIFIER APPLICATION ( Rev : 2010 )
Unisonic Technologies
SWITCHING AND AMPLIFIER APPLICATION
Unisonic Technologies
HIGH-POWER AMPLIFIER
Fujitsu
HIGH SPEED SWITCHING APPLICATION
DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD