Número de pieza
2SB526
componentes Descripción
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New Jersey Semiconductor
2SB526 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• Good Linearity of hFE
• Complement to Type 2SD356
APPLICATIONS
• Designed for AF high power dirver applications.
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