Número de pieza
2SB509
componentes Descripción
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Fabricante
New Jersey Semiconductor
2SB509 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min)
• Low Collector-Emitter Saturation Voltage
• Complement to Type 2SD315
APPLICATIONS
• Designed for AF power amplifier applications.
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