Número de pieza
2SB1402
componentes Descripción
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New Jersey Semiconductor
2SB1402 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEo= -120V(Min)
• High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V,lc= -1.5A)
APPLICATIONS
• Designed for low frequency power amplifier applications.
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