Número de pieza
2SB1372
componentes Descripción
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New Jersey Semiconductor
2SB1372 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2065
APPLICATIONS
• Designed for high power amplifications.
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