2SB1371 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter BreakdownVoltage- :V(BR)CEo=-120V(Min)
• Good Linearity of hFE
• Wide Area of Safe Operation
• Complement to Type 2SD2064
APPLICATIONS
• Designed for high power amplifications.
Número de pieza
componentes Descripción
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Fabricante
Silicon PNP Power Transistor
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Silicon PNP Power Transistor
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New Jersey Semiconductor
Silicon PNP Power Transistor
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Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor