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2SB1186F Hoja de datos - Shenzhen SPTECH Microelectronics Co., Ltd.
Fabricante

Shenzhen SPTECH Microelectronics Co., Ltd.
DESCRIPTION
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.)
• Good Linearity of hFE
• Complement to Type 2SD1763
APPLICATIONS
• Power amplifier applications.
• Driver stage amplifier applications.
Número de pieza
componentes Descripción
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Fabricante
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor