Número de pieza
2SB1100
componentes Descripción
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2 Pages
File Size
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Fabricante
New Jersey Semiconductor
2SB1100 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-100V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@lc=-10A
• Complement to Type 2SD1591
APPLICATIONS
• Designed for audio frequency power amplifier and low
speed high current switching industrialuse.
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