2SB1016A(1997) Hoja de datos - Toshiba
Fabricante
Toshiba
POWER AMPLIFIER APPLICATIONS
• High Breakdown Voltage: VCEO = −100 V
• Low Collector-Emitter Saturation Voltage: VCE (sat) = −2.0 V (Max.)
• Complementary to 2SD1407A
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componentes Descripción
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Fabricante
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
