2SA1147 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo=-180V(Min.)
• High Power Dissipation
• Complement to Type 2SC2707
APPLICATIONS
• Designed for power switching amplifier and general
purpose applications.
Número de pieza
componentes Descripción
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Fabricante
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Shenzhen SPTECH Microelectronics Co., Ltd.
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