2SA1112 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
V(BR)CEO=-180V(Min)
• Good Linearity of MFE
• Complement to Type 2SC2592
APPLICATIONS
• Designed for audio frequency drivers and high power
amplifier applications.
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor