General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

FEATUREs
■ Logic level compatible
■ Very fast switching
■ Subminiature surface-mounted package
■ Gate-source ElectroStatic Discharge (ESD) protection diodes

APPLICATIONs
■ Relay driver
■ High-speed line driver