General description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

FEATUREs
● Logic-level compatible
● Very fast switching
● Trench MOSFET technology
● ESD protection up to 3 kV

APPLICATIONs
● Relay driver
● High-speed line driver
● Low-side loadswitch
● Switching circuits