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2N7002(2007) Hoja de datos - Supertex Inc

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Número de pieza
2N7002

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5 Pages

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537.8 kB

Fabricante
Supertex
Supertex Inc 

General Description
The Supertex 2N7002 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.


FEATUREs
► Free from secondary breakdown
► Low power drive requirement
► Ease of paralleling
► Low CISS and fast switching speeds
► Excellent thermal stability
► Integral Source-Drain diode
► High input impedance and high gain
► Complementary N- and P-Channel devices


APPLICATIONs
► Motor controls
► Converters
► Amplifi ers
► Switches
► Power supply circuits
► Drivers (relays, hammers, solenoids, lamps,
   memories, displays, bipolar transistors, etc.)

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Fabricante
N-Channel Enhancement-Mode Vertical DMOS FETs
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N-Channel Enhancement-Mode Vertical DMOS FETs
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N-Channel Enhancement-Mode Vertical DMOS FETs ( Rev : 2001 )
PDF
Supertex Inc
N-Channel Enhancement-Mode Vertical DMOS FETs
PDF
Supertex Inc
N-Channel Enhancement-Mode Vertical DMOS FETs
PDF
Supertex Inc
N-Channel Enhancement-Mode Vertical DMOS FETs
PDF
Supertex Inc

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