Description
2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low-input capacitance, and fast switching speeds are desired.

FEATUREs
• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Low CISS and fast switching speeds
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and high gain

APPLICATIONs
• Motor controls
• Converters
• Amplifiers
• Switches
• Power supply circuits
• Drivers: relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.