2N6532 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain- : hFE= 1000(Min.)@IC= 5A
• Collector-Emitter Sustaining Voltage- :VCEO(SUS)= 100V(Min.)
• Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 5A
APPLICATIONS
• Power switching
• Hammer drivers
• Series and shunt regulators
• Audio amplifiers
Número de pieza
componentes Descripción
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Fabricante
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.