HIGH-POWER PNP SILICON TRANSISTORS

... designed for use in industrial power amplifiers and switching circuit applications.

FEATURES:
* High DC Current Gain
    hFE=20-80©lc=10A 
          =12 (Min)®lc=25A
* Low Collector-Emitter Saturation Voltage
    VCB(sat)= 1.0V (Max.) @ lc = 10 A, IB= 1.0A
* Complementto2N6338 thru 2N6340