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2N60Z(2012) Hoja de datos - Unisonic Technologies

2N60Z image

Número de pieza
2N60Z

componentes Descripción

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page
6 Pages

File Size
230.3 kB

Fabricante
UTC
Unisonic Technologies 

DESCRIPTION
   The UTC 2N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON) = 5Ω@VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness


Número de pieza
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