2N6057 Hoja de datos - Inchange Semiconductor
Fabricante

Inchange Semiconductor
DESCRIPTION
• Built-in Base-Emitter Shunt Resistors
• High DC current gain-
hFE = 750 (Min) @ IC = 6A
• Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
• Complement to type 2N6050
APPLICATIONS
• Designed for general purpose amplifier and low frequency
switching applications.
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
New Jersey Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon NPN Darlingtion Power Transistor
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlingtion Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.