Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications.

FEATUREs
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector−Emitter Sustaining Voltage − @ 100 mAdc −
                 VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043
                 = 100 Vdc (Min) − 2N6042, 2N6045
• Low Collector−Emitter Saturation Voltage −
                  VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44
                  = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
                         Machine Model, C > 400 V
• These Devices are Pb−Free and are RoHS Compliant*