Número de pieza
2N5014
componentes Descripción
Other PDF
no available.
PDF
page
2 Pages
File Size
195.2 kB
Fabricante
New Jersey Semiconductor
2N5014 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
FEATURES
● BACER AND BVCBO TO 1000 VOLTS
● LOW SATURATION VOLTAGE
● LOW LEAKAGE AT HIGH TMEPERATURE
● 200°C OPERATING, GOLD EUTECTIC DIE ATTACH
● 2N5010 THRU 2N5012 ALSO AVAILIABLE
Número de pieza
componentes Descripción
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Fabricante
Dual Microminiature Package 800 mA 75 Volts Dual NPN Transistor
Solid State Devices, Inc.
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor
Nexperia B.V. All rights reserved
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