Número de pieza
2N4912
componentes Descripción
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Fabricante
NTE Electronics
2N4912 Hoja de datos - NTE Electronics
NTE Electronics
Description:
The 2N4912 silicon NPN transistor in a TO−66 type package designed for driver circuits and switching and amplifier applications.
FEATUREs:
● Low Collector−Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 1A
● Excellent safe Operating Area
● Gain Specified to IC = 1A
Número de pieza
componentes Descripción
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