High Power NPN Silicon Power Transistors

These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications.

FEATUREs
• Forward Biased Second Breakdown Current Capability
   IS/b = 3.75 Adc @ VCE = 40 Vdc − 2N3771
           = 2.5 Adc @ VCE = 60 Vdc − 2N3772
• These Devices are Pb−Free and are RoHS Compliant