N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family

FEATUREs
• International standard packages
• Low RDS (on)HDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays