1SS374 Hoja de datos - Toshiba
Fabricante
Toshiba
High Speed Switching Application
Small package
Low forward voltage: VF (2) = 0.23V (typ.) @IF= 5mA
Número de pieza
componentes Descripción
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Fabricante
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
Silicon Epitaxial Schottky Barrier Type Diode
KEXIN Industrial
Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE ( Rev : 2001 )
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Silicon Epitaxial Schottky Barrier Type Diode
Toshiba
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
KEC
Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
( Rev : 2007 )
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
Toshiba
